双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN2R0-60ES

N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK

Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

此产品已停产

Features and benefits

  • High efficiency due to low switching and conduction losses
  • Robust construction for demanding applications
  • Standard level gate

Applications

  • DC-to-DC converters
  • Load switching
  • Motor control
  • Server power supplies

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN2R0-60ES SOT226 I2PAK End of life N 1 60 2.2 175 120 32 137 338 80 3 N 9997 1210 2011-01-18

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN2R0-60ES PSMN2R0-60ES,127
(934065162127)		 Withdrawn / End-of-life PSMN2R0 60ES SOT226
I2PAK
(SOT226) 		SOT226 暂无信息

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN2R0-60ES PSMN2R0-60ES,127 PSMN2R0-60ES rohs rhf
品质及可靠性免责声明

文档 (17)

文件名称 标题 类型 日期
PSMN2R0-60ES N-channel 60 V, 2.2 mΩ standard level MOSFET in I2PAK Data sheet 2018-04-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT226 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT226 plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2020-04-21
PSMN2R0_60ES PSMN2R0_60ES Spice Model SPICE model 2011-05-31
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN2R0-60ES PSMN2R0-60ES Thermal model Thermal model 2011-04-15

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PSMN2R0_60ES PSMN2R0_60ES Spice Model SPICE model 2011-05-31
PSMN2R0-60ES PSMN2R0-60ES Thermal model Thermal model 2011-04-15
SOT226 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册