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N-channel 100V 4.6 mΩ standard level MOSFET in TO220F (SOT186A)
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Features and benefits
- High efficiency due to low switching and conduction losses
- TO220 package
- Suitable for standard level gate drive
Applications
- AC-to-DC power supply equipment
- Motor control
- Server power supplies
- Synchronous rectification
参数类型
| 型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN4R6-100XS | SOT186A | TO-220F | End of life | N | 1 | 100 | 4.6 | 175 | 70.4 | 40 | 153 | 63.8 | 173 | 3 | N | 9900 | 660 | 2012-06-13 |
封装
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| PSMN4R6-100XS | PSMN4R6-100XS,127 (934067065127) |
Obsolete | PSMN4R6 100XS P**XXYY AZ Batch No | no package information | |||
环境信息
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMN4R6-100XS | PSMN4R6-100XS,127 | PSMN4R6-100XS |
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文档 (11)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PSMN4R6-100XS | N-channel 100V 4.6 mOhm standard level MOSFET in TO220F (SOT186A) | Data sheet | 2012-07-03 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| PSMN4R6-100XS | PSMN4R6-100XS Spice model | SPICE model | 2012-06-15 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PSMN4R6-100XS | PSMN4R6-100XS Spice model | SPICE model | 2012-06-15 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.