双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PXN2R9-100RS

N-channel 100 V, 2.9 mOhm, standard level Trench MOSFET in MLPAK56

General purpose MOSFET for standard applications, 180 A, standard level N-channel enhancement mode Power MOSFET in MLPAK56 package.

Features and benefits

  • Standard level compatibility

  • Trench MOSFET technology

  • Thermally efficient package in a small form factor (5.15 mm x 6.15 mm footprint)

Applications

  • Secondary side synchronous rectification

  • DC-to-DC converters

  • Home appliance

  • Motor drive

  • Load switching

  • LED lighting

  • E-bike

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PXN2R9-100RS SOT8038-1 MLPAK56 Qualification N 1 100 2.9 150 180 19 74 181 48 3 N 4892 1948 2023-08-07

文档 (3)

文件名称 标题 类型 日期
PXN2R9-100RS N-channel 100 V, 2.9 mOhm, standard level Trench MOSFET in MLPAK56 Data sheet 2024-08-16
SOT8038-1 3D model for products with SOT8038-1 package Design support 2024-07-12
SOT8038-1 plastic thermal enhanced surface mounted package;mini leads; 8 terminals; pitch 1.27 mm; 6 x 5 x 1.0 mm body Package information 2024-07-11

支持

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模型

文件名称 标题 类型 日期
SOT8038-1 3D model for products with SOT8038-1 package Design support 2024-07-12

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册