可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
PXN5R9-60RLA | PXN5R9-60RLAJ | 934668060118 | SOT8038-1 | 订单产品 |
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Click here for more informationN-channel 60 V, 5.9 mOhm, logic level Trench MOSFET in MLPAK56
General purpose MOSFET for standard applications, 66 A, logic level, N-channel enhancement mode Power MOSFET in MLPAK56 package.
Logic level compatibility
Trench MOSFET technology
Thermally efficient package in a small form factor (5.15 mm x 6.15 mm footprint)
Secondary side synchronous rectification
DC-to-DC converters
Home appliance
Motor drive
Load switching
LED lighting
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PXN5R9-60RLA | SOT8038-1 | MLPAK56 | Development | N | 1 | 60 | 5.9 | 8.3 | 150 | 66 | 4.2 | 13 | 25 | 52 | N | 1520 | 526 | 2024-12-02 |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PXN5R9-60RLA | PXN5R9-60RLAJ (934668060118) |
Development | N5R9-60 |
MLPAK56 (SOT8038-1) |
SOT8038-1 | 暂无信息 |
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文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
SOT8038-1 | 3D model for products with SOT8038-1 package | Design support | 2024-07-12 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
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作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.