双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PUMF12

PNP general purpose transistor; NPN resistor-equipped transistor

PNP general purpose transistor and an NPN resistor-equipped transistor in a SOT363 (SC-88) plastic package.

此产品已停产

Features and benefits

  • General purpose transistor and resistor equipped transistor in one package
  • 100 mA collector current
  • 50 V collector-emitter voltage
  • 300 mW total power dissipation
  • SOT363 package; replaces two SOT323 (SC-70)packaged devices on same PCB area
  • Reduced pick and place costs.

Applications

  • Power management switch for portable equipment, e.g. cellular phone and CD player
  • Switch for regulator.

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PUMF12 PUMF12,115
(934057332115)		 Obsolete R2% no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PUMF12 PUMF12,115 PUMF12 rohs rhf rhf
品质及可靠性免责声明

文档

No documents available

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册