双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

4 kW analogue bridgeless totem-pole PFC evaluation board

For this evaluation board, the PFC circuit has been implemented on a 4-layer PCB, with 2 oz copper for the outer layers and 1.5 oz copper for the inner layers. GAN039-650NTB devices by Nexperia are used for both the fast and slow switching legs. The inductor is made of a High Flux core with the inductance of 480 μH and a DC resistance of 0.025 Ω, designed to operate at 65 kHz. A simple 4 A rated high/low side driver IC (Si8273) with 0 V and 12 V as the on/off voltage levels directly drives each GaN FET. The control function is handled by a TI UCC28180 PFC controller.

4 kW analogue bridgeless totem-pole PFC evaluation board

Key features & benefits

By using a diode-free power GaN FET bridge with low reverse-recovery charge, very-high-efficiency single-phase AC-DC conversion is realized. In this circuit, the performance and efficiency improvement, is achieved by use of the GaN FETs in the fast-switching leg of the circuit. GaN FETs with low Qrr provide low loss hardswitching performance in this application.

Key applications

板上的产品 (1)

Type number Description Status Quick access
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Production

相关板块 (4)

Board Description Type Quick links Shop link
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) NX-HB-GAN041UL-GAN041-650WSB-half-bridge-evaluation-board Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) Evaluation board
Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-DP-GAN039-TSC-half-bridge-evaluation-board Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package NX-HB-GAN039-BSCUL-bottom-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package Evaluation board

Latest videos

Using Power GaN FETs in AC/DC converters - Quick Learning

Using Power GaN FETs in AC/DC converters - Quick Learning

板上的产品 (1)

Type number Description Status Quick access
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Production

相关板块 (4)

Board Description Type Quick links Shop link
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) NX-HB-GAN041UL-GAN041-650WSB-half-bridge-evaluation-board Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) Evaluation board
Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-DP-GAN039-TSC-half-bridge-evaluation-board Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package NX-HB-GAN039-BSCUL-bottom-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package Evaluation board

文档 (2)

文件名称 标题 类型 日期
GaNFET_evaluation_board_Terms_Of_Use GaN FET EVALUATION BOARD TERMS OF USE Other type 2023-10-10
UM90024 4 kW analogue bridgeless totem-pole PFC evaluation board User manual 2023-11-21