双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74ALVC16835

18-bit registered driver; 3-state

The 74ALVC16835A is a 18–bit registered driver. Data flow is controlled by active low output enable (OE), active low latch enable (LE) and clock inputs (CP).

When LE is LOW, the A to Y data flow is transparent. When LE is HIGH and CP is held at LOW or HIGH, the data is latched; on the LOW to HIGH transient of CP the A-data is stored in the latch/flip-flop.

When OE is LOW the outputs are active. When OE is HIGH, the outputs go to the high impedance OFF–state. Operation of the OE input does not affect the state of the latch/flip-flop.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

Features and benefits

  • Wide supply voltage range from 1.2 V to 3.6 V
  • CMOS low-power consumption
  • Direct interface with TTL levels
  • Current drive ± 24 mA at 3.0 V
  • MULTIBYTE flow-through standard pin-out architecture
  • Low inductance multiple VCC and GND pins for minimum noise and ground bounce
  • Output drive capability 50 Ω transmission lines at 85°C
  • Input diodes to accommodate strong drivers
  • Complies with JEDEC standards:
    • JESD8-5 (2.3 V to 2.7 V)
    • JESD8B/JESD36 (2.7 V to 3.6 V)
  • ESD protection:
    • HBM ANSI/ESDA/JEDEC JS-001 exceeds 2000 V
    • CDM JESD22-C101E exceeds 1000 V

Applications

文档 (2)

文件名称 标题 类型 日期
74ALVC16835A 18-bit registered driver; 3-state Data sheet 2018-01-19
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10

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