双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NXS0506

SD 3.0-compatible memory card integrated auto-direction control and level translator with EMI filter and ESD protection

The NXS0506 is an SD 3.0-compatible bidirectional dual supply level translator with auto-direction control. It is designed to interface between a memory card operating at 1.7 V to 3.6 V signal levels and a host with a nominal supply voltage of 1.1 V to 1.95 V. The device supports SD 3.0: SDR104, SDR50, DDR50, SDR25, SDR12 and SD 2.0 High-Speed (50 MHz) and Default-Speed (25 MHz) modes. The device has a built-in EMI filter and robust ESD protection (IEC 61000-4-2, level 4).

Features and benefits

  • Supports up to 208 MHz clock rate

  • SD 3.0 specification-compatible voltage translation to support: SDR104, SDR50, DDR50, SDR25, SDR12, High-Speed and Default-Speed modes

  • 1.1 V to 1.95 V host side interface voltage support

  • Auto-direction sensing

  • Low power consumption

  • Integrated pull-up resistors: no external resistors required

  • Integrated EMI filters suppress higher harmonics of digital I/Os

  • Level shifting buffers keep ESD stress away from the host (zero-clamping concept)

  • 16-bumps WLCSP16 package; pitch 0.35 mm

  • 16-terminal XQFN16 package; pitch 0.4 mm

  • Latch-up performance exceeds 100 mA per JESD78 Class II.A

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2 kV

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1 kV

    • IEC61000-4-2, level 4, contact discharge on all memory card-side pins exceeds 8 kV

    • IEC61000-4-2, level 4, air discharge on all memory card-side pins exceeds 15 kV

  • Specified from -40 °C to +85 °C

Applications

  • Smartphone

  • Mobile handsets

  • Digital cameras

  • Tablet PCs

  • Laptop computers

  • SD, MMC or microSD card readers

参数类型

型号 VCC(A) (V) VCC(B) (V) Logic switching levels Output drive capability (mA) tpd (ns) Nr of bits Power dissipation considerations Tamb (°C) Package name
NXS0506GU 1.1 - 1.95 1.7 - 3.6 CMOS ± 2 2.6 6 low -40~85 XQFN16
NXS0506UP 1.1 - 1.95 1.7 - 3.6 CMOS ± 2 2.6 6 low -40~85 WLCSP16

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
NXS0506GU NXS0506GUX
(935691516115)
Active m5 SOT1161-1
XQFN16
(SOT1161-1)
SOT1161-1 SOT1161-1_115
NXS0506UP NXS0506UPAZ
(935691201336)
Active m5 SOT8025-1
WLCSP16
(SOT8025-1)
SOT8025-1 SOT8025-1_336

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
NXS0506UP NXS0506UPZ
(935691201084)
Withdrawn / End-of-life m5 SOT8025-1
WLCSP16
(SOT8025-1)
SOT8025-1 暂无信息

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NXS0506GU NXS0506GUX NXS0506GU rohs rhf rhf
NXS0506UP NXS0506UPAZ NXS0506UP rohs rhf rhf

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NXS0506UP NXS0506UPZ NXS0506UP rohs rhf rhf
品质及可靠性免责声明

文档 (9)

文件名称 标题 类型 日期
NXS0506 SD 3.0-compatible memory card integrated auto-direction control and level translator with EMI filter and ESD protection Data sheet 2024-02-06
AN90037 NXS0506 SD-card voltage level translator Application note 2022-09-22
SOT1161-1 3D model for products with SOT1161-1 package Design support 2023-02-07
SOT8025-1 3D model for products with SOT8025-1 package Design support 2023-02-07
nxs0506 NXS0506 IBIS model IBIS model 2021-12-21
SD_card_NXS0506_leaflet SD card NXS0506 LEaflet Leaflet 2024-06-28
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT1161-1 plastic, leadless extermely thin quad flat package; 16 terminals; 0.4 mm pitch; 2.6 mm x 1.8 mm x 0.5 mm body Package information 2022-06-15
SOT8025-1 wafer level chip-scale package; 16 bumps; 1.455 mm x 1.455 mm x 0.43 mm bod Package information 2022-07-08

支持

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模型

文件名称 标题 类型 日期
SOT1161-1 3D model for products with SOT1161-1 package Design support 2023-02-07
SOT8025-1 3D model for products with SOT8025-1 package Design support 2023-02-07
nxs0506 NXS0506 IBIS model IBIS model 2021-12-21

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