双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PESD5V0L6UAS; PESD5V0L6US

Low capacitance 6-fold ESD protection diode arrays

Low capacitance 6-fold ESD protection diode arrays in small plastic packages designed to protect up to six transmission or data lines from the damage caused by ElectroStatic Discharge (ESD) and other transients.

Features and benefits

  • ESD protection of up to six lines
  • Ultra low leakage current: IRM = 8 nA
  • Low diode capacitance
  • ESD protection of up to 20 kV
  • Max. peak pulse power: PPP = 35 W
  • IEC 61000-4-2, level 4 (ESD)
  • Low clamping voltage: V(CL)R = 15 V
  • IEC 61000-4-5 (surge); IPP = 2.5 A
  • AEC-Q101 qualified

Applications

  • Computers and peripherals
  • High speed data lines
  • Communication systems
  • Parallel ports
  • Audio and video equipment

文档 (5)

文件名称 标题 类型 日期
PESD5V0L6UAS_US Low capacitance 6-fold ESD protection diode arrays Data sheet 2023-04-13
sot096-1_sv Simplified outline: SOT096-1 Block diagram 2009-11-04
sot505-1_sv Simplified outline: SOT505-1 Block diagram 2009-11-03
sym004 Graphic symbol: Six Schottky diodes Block diagram 2009-11-03
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10

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