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Click here for more information74AHCT2G32GD
Dual 2-input OR gate
The 74AHC2G32; 74AHCT2G32 is a dual 2-input OR gate. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments.
Alternatives
Features and benefits
Wide supply voltage range from 2.0 to 5.5 V
Overvoltage tolerant inputs to 5.5 V
Input levels:
For 74AHC2G32: CMOS level
For 74AHCT2G32: TTL level
CMOS low power dissipation
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Latch-up performance exceeds 100 mA per JESD 78 Class II Level A
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
参数类型
型号 | Package name |
---|---|
74AHCT2G32GD | XSON8 |
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
74AHCT2G32GD | 74AHCT2G32GD,125 (935288567125) |
Obsolete | C32 Standard Procedure Standard Procedure |
XSON8 (SOT996-2) |
SOT996-2 | SOT996-2_125 |
文档 (6)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74AHC_AHCT2G32 | Dual 2-input OR gate | Data sheet | 2023-09-01 |
AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
AN11106 | Pin FMEA for AHC/AHCT family | Application note | 2019-01-09 |
ahct2g32 | ahct2g32 IBIS model | IBIS model | 2013-04-08 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT996-2 | plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body | Package information | 2020-04-21 |
支持
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模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
ahct2g32 | ahct2g32 IBIS model | IBIS model | 2013-04-08 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.