双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NID5100GW

1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode

The NID5100 is an integrated ideal diode capable of replacing traditional diodes in low voltage systems unable to tolerate the high voltage drops of conventional Schottky components.

When enabled and forward biased, the device regulates the voltage between the IN and OUT pins resulting in a forward voltage drop, VREG, approximately an order of magnitude smaller than similarly rated Schottky diodes. When OUT voltage is higher than IN voltage, the NID5100 becomes reverse biased with very low leakage current.

Integrated Reverse-Polarity Protection (RPP) prevents damage to components connected to the OUT pin in the event of a supply voltage reversal.

The enable pin, EN determines if NID5100 operates in forward regulation mode or body-diode mode.

A variety of power OR-ing configurations are supported for system flexibility:

  • Two, or more, NID5100 devices in combination

  • NID5100s and conventional Schottky diodes

  • An NID5100 and an external PMOS

An open-drain status pin, ST, is high-impedance when NID5100 is enabled and in forward conduction and low when disabled or in a reverse biased condition. The ST pin can be used to control an external PMOS to OR an additional supply, or connected to a microcontroller to indicate the status condition of NID5100.

The NID5100 is available in a standard TSSOP6 (SOT363-2) with 2.1 mm x 1.25 mm x 0.95 mm body package compatible with industry SC88/SC70-6 packages providing a small PCB footprint compared to conventional low-current diodes.

Features and benefits

  • Low loss replacement for power OR-ing diodes

  • Automatic transition between OR-ed supplies

  • Operating voltage range: 1.2 V to 5.5 V

  • Reverse voltage protection VIN: -6 V absolute maximum

  • Supports forward current up to 1.5 A

  • Forward regulation voltage, VREG : 31 mV (typ) at IOUT = 10 mA, VIN = 3.3 V

  • Active LOW control pin, EN

  • Output status indication, ST

  • Low current consumption:

    • 3.3 V shutdown current, IIN(SD): 170 nA (typ)

    • 3.3 V quiescent current, IIN(Q): 240 nA (typ)

  • Specified over Tamb -40 °C to +125 °C

Applications

  • Building automation

  • Smart meters

  • OR-ed primary and battery backup

Figure 1. Simplified application

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
NID5100GW NID5100GWH
(935691420125)
Active u1 SOT363-2
TSSOP6
(SOT363-2)
SOT363-2 SOT363-2_125

Boards

Part number Description Type Quick links Shop link
描述
The NEVB-NID5100 evaluation board is a two-layer PCB equipped with two NID5100 ideal diodes. It allows users to explore the device's behavior under various application conditions like: OR-ing two supplies, reverse polarity protection, reverse current blocking and ORing with an external Mosfet
类型
Evaluation board
Quick links
Shop link

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NID5100GW NID5100GWH NID5100GW rohs rhf rhf
品质及可靠性免责声明

Series

文档 (5)

文件名称 标题 类型 日期
NID5100 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode Data sheet 2024-07-26
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02
SOT363-2 plastic thin shrink small outline package; 6 leads; body width 1.25 mm Package information 2022-11-21
SOT363-2_125 TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2022-11-04
UM90040 NID5100, 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode evaluation board User manual 2024-07-25

支持

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模型

文件名称 标题 类型 日期
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
NID5100GW NID5100GWH 935691420125 Active SOT363-2_125 3,000 订单产品

样品

作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
NID5100GW NID5100GWH 935691420125 SOT363-2 订单产品