双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BZX58550-C12

Low-current voltage regulator diodes

Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Total power dissipation: ≤ 300 mW

  • Two tolerance series: ± 2 % and approximately ± 5 %

  • Working voltage range: nominal 1.8 V to 51 V

  • Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

  • BZX58550-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031]

Applications

  • Low-current general regulation functions

参数类型

型号 VZ [nom] (V) IZ (mA) Tolerance +/- VZ [min] (V) VZ [max] (V) IF [max] (mA) Ptot (mW) PZSM (W) TJ [max] (°C) Configuration
BZX58550-C12 12 0.05 appr. 5% 11.4 12.6 200 300 40 150 single

文档 (1)

文件名称 标题 类型 日期
BZX58550_SER Low-current voltage regulator diodes Data sheet 2024-07-26

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

No documents available

订购、定价与供货

样品

作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.