双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN3R7-25YLC

N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

此产品已停产

Features and benefits

  • High reliability Power SO8 package, qualified to 175°C
  • Low parasitic inductance and resistance
  • Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
  • Ultra low QG, QGD & QOSS for high system efficiencies at low and high loads

Applications

  • DC-to-DC converters
  • Load switching
  • Power OR-ing
  • Server power supplies
  • Sync rectifier

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN3R7-25YLC SOT669 LFPAK56; Power-SO8 End of life N 1 25 3.9 5.1 175 97 3 10.1 21.6 64 14 1.54 N 1585 370 2011-04-07

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN3R7-25YLC PSMN3R7-25YLC,115
(934065204115)		 Obsolete 3C725L P** XXYY AZ Batch No SOT669
LFPAK56; Power-SO8
(SOT669) 		SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN3R7-25YLC PSMN3R7-25YLC,115 PSMN3R7-25YLC rohs rhf
品质及可靠性免责声明

Series

文档 (20)

文件名称 标题 类型 日期
PSMN3R7-25YLC N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology Data sheet 2011-05-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2022-05-30
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN3R7_25YLC PSMN3R7_25YLC Spice model SPICE model 2011-04-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN3R7-25YLC PSMN3R7-25YLC Thermal model Thermal model 2011-04-08
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PSMN3R7_25YLC PSMN3R7_25YLC Spice model SPICE model 2011-04-12
PSMN3R7-25YLC PSMN3R7-25YLC Thermal model Thermal model 2011-04-08
SOT669 3D model for products with SOT669 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册