双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PMCM950ENE

60 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

此产品已停产

Features and benefits

  • Low threshold voltage

  • Ultra small package: 1.48 × 1.48 × 0.35 mm

  • Trench MOSFET technology

  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • High-speed line driver

  • Low-side load switch

  • Switching circuits

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMCM950ENE WLCSP9_3X3 WLCSP9 End of life N 1 60 20 41 47 150 6.1 5.9 30 0.78 1.2 N 1160 71 2019-05-13

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PMCM950ENE PMCM950ENEZ
(934660311023)		 Discontinued / End-of-life WLCSP9_3X3
WLCSP9
(WLCSP9_3X3) 		WLCSP9_3X3 暂无信息

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PMCM950ENE PMCM950ENEZ PMCM950ENE rohs rhf rhf
品质及可靠性免责声明

文档 (5)

文件名称 标题 类型 日期
PMCM950ENE 60 V, N-channel Trench MOSFET Data sheet 2019-05-13
WLCSP9_3X3 3D model for products with WLCSP9_3X3 package Design support 2023-03-13
nexperia_document_leaflet_SsMOS_for_mobile_2022 High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages Leaflet 2022-07-04
WLCSP9_3X3 WLCSP9: wafer level chip-size package; 9 bumps (3 x 3) Package information 2020-04-21
PMCM950ENE PMCM950ENE SPICE model SPICE model 2020-02-19

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PMCM950ENE PMCM950ENE SPICE model SPICE model 2020-02-19
WLCSP9_3X3 3D model for products with WLCSP9_3X3 package Design support 2023-03-13

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册