外形图
| 封装版本 | 封装名称 | 封装说明 | 参考 | 发行日期 |
|---|---|---|---|---|
| SOT1205 | LFPAK56D; Dual LFPAK | plastic, single ended surface mounted package (LFPAK56D); 8 leads | --- (EIAJ); --- (JEDEC) | 2014-10-28 |
相关文档
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| SOT1205 | 3D model for products with SOT1205 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| LFPAK56D_SOT1205_mk | plastic, single ended surface mounted package (LFPAK56D); 8 leads; 1.27 mm pitch; 4.7 mm x 5.3 mm x 1.05 mm body | Marcom graphics | 2017-01-28 |
| SOT1205 | plastic, single ended surface mounted package (LFPAK56D); 8 leads | Package information | 2022-03-11 |
| SOT1205_115 | LFPAK56D; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2021-01-11 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
采用此封装的产品
Automotive qualified products (AEC-Q100/Q101)
| 型号 | 描述 | 快速访问 |
|---|---|---|
| BUK9K6R2-40E | Dual N-channel TrenchMOS logic level FET | |
| BUK7K15-80E | Dual N-channel 80 V, 15 mΩ standard level MOSFET | |
| BUK7K13-60E | Dual N-channel 60 V, 10 mΩ standard level MOSFET | |
| BUK7K29-100E | Dual N-channel 100 V, 24.5 mΩ standard level MOSFET | |
| BUK7K6R8-40E | Dual N-channel 40 V, 6.8 mΩ standard level MOSFET | |
| BUK7K17-60E | Dual N-channel 60 V, 14 mΩ standard level MOSFET | |
| BUK7K52-60E | Dual N-channel 60 V, 45 mΩ standard level MOSFET | |
| BUK7K45-100E | Dual N-channel 100 V, 37.6 mΩ standard level MOSFET | |
| BUK7K25-40E | Dual N-channel 40 V, 25 mΩ standard level MOSFET | |
| BUK7K17-80E | Dual N-channel 80 V, 17 mΩ standard level MOSFET | |
| BUK7V4R2-40H | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | |
| BUK7K134-100E | Dual N-channel 100 V, 121 mΩ standard level MOSFET | |
| BUK7K89-100E | Dual N-channel 100 V, 82.5 mΩ standard level MOSFET | |
| BUK7K12-60E | Dual N-channel 60 V, 9.3 mΩ standard level MOSFET | |
| BUK9K6R8-40E | Dual N-channel 40 V, 7.2 mΩ logic level MOSFET | |
| BUK7K6R2-40E | Dual N-channel 40 V, 5.8 mΩ standard level MOSFET | |
| BUK9K134-100E | Dual N-channel 100 V, 159 mΩ logic level MOSFET | |
| BUK9K13-60RA | Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | |
| BUK9V13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | |
| BUK9K20-80E | Dual N-channel 80 V, 20 mΩ logic level MOSFET | |
| BUK9K45-100E | Dual N-channel TrenchMOS logic level FET | |
| BUK9K52-60E | Dual N-channel 60 V, 55 mΩ logic level MOSFET | |
| BUK9K13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D | |
| BUK9K17-60E | Dual N-channel 60 V, 17 mΩ logic level MOSFET | |
| BUK7K32-100E | Dual N-channel 100 V, 27.5 mΩ standard level MOSFET | |
| BUK7K8R7-40E | Dual N-channel 40 V, 8.5 mΩ standard level MOSFET | |
| BUK9K8R7-40E | Dual N-channel 40 V, 9.4 mΩ logic level MOSFET | |
| BUK9K32-100E | Dual N-channel 100 V, 33 mΩ logic level MOSFET | |
| BUK9K13-60E | Dual N-channel 60 V, 12.5 mΩ logic level MOSFET | |
| BUK9K25-40RA | Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | |
| BUK9K30-80E | Dual N-channel 80 V, 30 mΩ logic level MOSFET | |
| BUK9K89-100E | Dual N-channel TrenchMOS logic level FET | |
| BUK7K35-60E | Dual N-channel 60 V, 30 mΩ standard level MOSFET | |
| BUK9K5R6-30E | Dual N-channel 30 V, 5.8 mΩ logic level MOSFET | |
| BUK9K18-40E | Dual N-channel 40 V, 19.5 mΩ logic level MOSFET | |
| BUK9K25-40E | Dual N-channel 40 V, 29 mΩ logic level MOSFET | |
| BUK9K35-60RA | Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | |
| BUK9K22-80E | Dual N-channel 80 V, 22 mΩ logic level MOSFET | |
| BUK7K5R1-30E | Dual N-channel 30 V, 5.1 mΩ standard level MOSFET | |
| BUK7K23-80E | Dual N-channel 80 V, 23 mΩ standard level MOSFET | |
| BUK7K5R6-30E | Dual N-channel 30 V, 5.1 mΩ standard level MOSFET | |
| BUK7K18-40E | Dual N-channel 40 V, 19 mΩ standard level MOSFET | |
| BUK9K5R1-30E | Dual N-channel 30 V, 5.3 mΩ logic level MOSFET | |
| BUK9K52-60RA | Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | |
| PHPT610035PK | PNP/PNP matched high power double bipolar transistor | |
| PHPT610035NK | NPN/NPN high power double bipolar transistor | |
| PHPT610030NPK | NPN/PNP high power double bipolar transistor | |
| PHPT610030NK-Q | NPN/NPN high power double bipolar transistor | |
| PHPT610030PK-Q | PNP/PNP high power double bipolar transistor | |
| BUK9K12-60E | Dual N-channel 60 V, 11.5 mΩ logic level MOSFET | |
| BUK9K35-60E | Dual N-channel 60 V, 35 mΩ logic level MOSFET | |
| PHPT610035PK-Q | PNP/PNP matched high power double bipolar transistor | |
| PHPT610035NK-Q | NPN/NPN high power double bipolar transistor | |
| BUK9K29-100E | Dual N-channel TrenchMOS logic level FET | |
| PHPT610030NPK-Q | NPN/PNP high power double bipolar transistor | |
| BUK9K49-80L | Dual N-channel 80 V, 49 mOhm logic level MOSFET in LFPAK56D |
Bipolar transistors
| 型号 | 描述 | 快速访问 |
|---|---|---|
| PHPT610035PK | PNP/PNP matched high power double bipolar transistor | |
| PHPT610035NK | NPN/NPN high power double bipolar transistor | |
| PHPT610030NK | NPN/NPN high power double bipolar transistor | |
| PHPT610030NPK | NPN/PNP high power double bipolar transistor | |
| PHPT610030PK | PNP/PNP high power double bipolar transistor | |
| PHPT610030NK-Q | NPN/NPN high power double bipolar transistor | |
| PHPT610030PK-Q | PNP/PNP high power double bipolar transistor | |
| PHPT610035PK-Q | PNP/PNP matched high power double bipolar transistor | |
| PHPT610035NK-Q | NPN/NPN high power double bipolar transistor | |
| PHPT610030NPK-Q | NPN/PNP high power double bipolar transistor |
MOSFETs
| 型号 | 描述 | 快速访问 |
|---|---|---|
| BUK9K6R2-40E | Dual N-channel TrenchMOS logic level FET | |
| BUK7K15-80E | Dual N-channel 80 V, 15 mΩ standard level MOSFET | |
| BUK7K13-60E | Dual N-channel 60 V, 10 mΩ standard level MOSFET | |
| BUK7K29-100E | Dual N-channel 100 V, 24.5 mΩ standard level MOSFET | |
| BUK7K6R8-40E | Dual N-channel 40 V, 6.8 mΩ standard level MOSFET | |
| BUK7K17-60E | Dual N-channel 60 V, 14 mΩ standard level MOSFET | |
| BUK7K52-60E | Dual N-channel 60 V, 45 mΩ standard level MOSFET | |
| BUK7K45-100E | Dual N-channel 100 V, 37.6 mΩ standard level MOSFET | |
| BUK7K25-40E | Dual N-channel 40 V, 25 mΩ standard level MOSFET | |
| BUK7K17-80E | Dual N-channel 80 V, 17 mΩ standard level MOSFET | |
| BUK7V4R2-40H | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | |
| BUK7K134-100E | Dual N-channel 100 V, 121 mΩ standard level MOSFET | |
| BUK7K89-100E | Dual N-channel 100 V, 82.5 mΩ standard level MOSFET | |
| BUK7K12-60E | Dual N-channel 60 V, 9.3 mΩ standard level MOSFET | |
| BUK9K6R8-40E | Dual N-channel 40 V, 7.2 mΩ logic level MOSFET | |
| BUK7K6R2-40E | Dual N-channel 40 V, 5.8 mΩ standard level MOSFET | |
| BUK9K134-100E | Dual N-channel 100 V, 159 mΩ logic level MOSFET | |
| BUK9K13-60RA | Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | |
| BUK9V13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | |
| BUK9K20-80E | Dual N-channel 80 V, 20 mΩ logic level MOSFET | |
| BUK9K45-100E | Dual N-channel TrenchMOS logic level FET | |
| BUK9K52-60E | Dual N-channel 60 V, 55 mΩ logic level MOSFET | |
| BUK9K13-40H | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D | |
| BUK9K17-60E | Dual N-channel 60 V, 17 mΩ logic level MOSFET | |
| BUK7K32-100E | Dual N-channel 100 V, 27.5 mΩ standard level MOSFET | |
| BUK7K8R7-40E | Dual N-channel 40 V, 8.5 mΩ standard level MOSFET | |
| BUK9K8R7-40E | Dual N-channel 40 V, 9.4 mΩ logic level MOSFET | |
| BUK9K32-100E | Dual N-channel 100 V, 33 mΩ logic level MOSFET | |
| BUK9K13-60E | Dual N-channel 60 V, 12.5 mΩ logic level MOSFET | |
| BUK9K25-40RA | Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | |
| BUK9K30-80E | Dual N-channel 80 V, 30 mΩ logic level MOSFET | |
| BUK9K89-100E | Dual N-channel TrenchMOS logic level FET | |
| BUK7K35-60E | Dual N-channel 60 V, 30 mΩ standard level MOSFET | |
| BUK9K5R6-30E | Dual N-channel 30 V, 5.8 mΩ logic level MOSFET | |
| BUK9K18-40E | Dual N-channel 40 V, 19.5 mΩ logic level MOSFET | |
| BUK9K25-40E | Dual N-channel 40 V, 29 mΩ logic level MOSFET | |
| BUK9K35-60RA | Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | |
| BUK9K22-80E | Dual N-channel 80 V, 22 mΩ logic level MOSFET | |
| BUK7K5R1-30E | Dual N-channel 30 V, 5.1 mΩ standard level MOSFET | |
| BUK7K23-80E | Dual N-channel 80 V, 23 mΩ standard level MOSFET | |
| BUK7K5R6-30E | Dual N-channel 30 V, 5.1 mΩ standard level MOSFET | |
| BUK7K18-40E | Dual N-channel 40 V, 19 mΩ standard level MOSFET | |
| BUK9K5R1-30E | Dual N-channel 30 V, 5.3 mΩ logic level MOSFET | |
| BUK9K52-60RA | Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology | |
| PSMN4R2-40VSH | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | |
| PSMN013-40VLD | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | |
| PSMN045-100HL | N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN012-60HL | N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche | |
| PSMN6R8-40HS | N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN013-60HL | N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN011-60HL | N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN8R0-40HL | N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN029-100HL | N-channel 100 V, 29 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN6R1-40HL | N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN013-60HS | N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN025-100HS | N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN9R3-60HS | N-channel 60 V, 9.3 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN014-60HS | N-channel 60 V, 14 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN8R5-40HS | N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN014-40HLD | N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology | |
| PSMN033-100HL | N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN028-100HS | N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | |
| PSMN038-100HS | N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | |
| BUK9K12-60E | Dual N-channel 60 V, 11.5 mΩ logic level MOSFET | |
| BUK9K35-60E | Dual N-channel 60 V, 35 mΩ logic level MOSFET | |
| BUK9K29-100E | Dual N-channel TrenchMOS logic level FET | |
| BUK9K49-80L | Dual N-channel 80 V, 49 mOhm logic level MOSFET in LFPAK56D |