双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74CBTLV3126BQ

4-bit bus switch

The 74CBTLV3126 provides a 4-bit high-speed bus switch with separate output enable inputs (1OE to 4OE). The low on-state resistance of the switch allows connections to be made with minimal propagation delay. The switch is disabled (high-impedance OFF-state) when the output enable (nOE) input is LOW.

To ensure the high-impedance OFF-state during power-up or power-down, nOE should be tied to the GND through a pull-down resistor. The minimum value of the resistor is determined by the current-sinking capability of the driver.

Schmitt trigger action at control input makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 2.3 V to 3.6 V.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

Features and benefits

  • Supply voltage range from 2.3 V to 3.6 V

  • Standard '126'-type pinout

  • High noise immunity

  • Complies with JEDEC standard:

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8-B/JESD36 (2.7 V to 3.6 V)

  • 5 Ω switch connection between two ports

  • Rail to rail switching on data I/O ports

  • CMOS low power consumption

  • Latch-up performance exceeds 250 mA per JESD78B Class I level A

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

参数类型

型号 VCC (V) VPASS (V) Logic switching levels RON (Ω) f(-3dB) (MHz) Nr of bits tpd (ns) Power dissipation considerations Tamb (°C) Package name
74CBTLV3126BQ 2.3 - 3.6 3.3 CMOS/LVTTL 7 400 4 0.2 very low -40~125 DHVQFN14

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
74CBTLV3126BQ 74CBTLV3126BQ,115
(935289342115)
Active V3126 SOT762-1
DHVQFN14
(SOT762-1)
SOT762-1 SOT762-1_115

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74CBTLV3126BQ 74CBTLV3126BQ,115 74CBTLV3126BQ rohs rhf rhf
品质及可靠性免责声明

文档 (8)

文件名称 标题 类型 日期
74CBTLV3126 4-bit bus switch Data sheet 2024-04-11
SOT762-1 3D model for products with SOT762-1 package Design support 2019-10-03
cbtlv3126 74CBTLV3126 IBIS model IBIS model 2015-02-23
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DHVQFN14_SOT762-1_mk plastic, dual in-line compatible thermal enhanced very thin quad flat package; no leads; 14 terminals; 0.5 mm pitch; 2.5 mm x 3 mm x 0.85 mm body Marcom graphics 2017-01-28
SOT762-1 plastic, leadless dual in-line compatible thermal enhanced very thin quad flat package; 14 terminals; 0.5 mm pitch; 2.5 x 3 x 1 mm body Package information 2023-04-05
SOT762-1_115 DHVQFN14; Reel pack for SMD, 7"; Q1/T1 product orientation Packing information 2020-04-21
74CBTLV3126BQ_Nexperia_Product_Reliability 74CBTLV3126BQ Nexperia Product Reliability Quality document 2024-06-16

支持

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模型

文件名称 标题 类型 日期
cbtlv3126 74CBTLV3126 IBIS model IBIS model 2015-02-23
SOT762-1 3D model for products with SOT762-1 package Design support 2019-10-03

PCB Symbol, Footprint and 3D Model

Model Name 描述

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
74CBTLV3126BQ 74CBTLV3126BQ,115 935289342115 Active SOT762-1_115 3,000 订单产品

样品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
74CBTLV3126BQ 74CBTLV3126BQ,115 935289342115 SOT762-1 订单产品