双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVC161DB

Presettable synchronous 4-bit binary counter; asynchronous reset

The 74LVC161 is a synchronous presettable binary counter with an internal look-head carry. Synchronous operation is provided by having all flip-flops clocked simultaneously on the positive-going edge of the clock (CP). The outputs (Q0 to Q3) of the counters may be preset HIGH or LOW. A LOW at the parallel enable input (PE) disables the counting action and causes the data at the data inputs (D0 to D3) to be loaded into the counter on the positive-going edge of the clock. Preset takes place regardless of the levels at count enable inputs (CEP and CET). A LOW at the master reset input (MR) sets Q0 to Q3 LOW regardless of the levels at input pins CP, PE, CET and CEP (thus providing an asynchronous clear function). The look-ahead carry simplifies serial cascading of the counters. Both CEP and CET must be HIGH to count. The CET input is fed forward to enable the terminal count output (TC). The TC output thus enabled will produce a HIGH output pulse of a duration approximately equal to a HIGH output of Q0. This pulse can be used to enable the next cascaded stage.

Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

此产品已停产

Features and benefits

  • Overvoltage tolerant inputs to 5.5 V

  • Wide supply voltage range from 1.2 V to 3.6 V

  • CMOS low power dissipation

  • Direct interface with TTL levels

  • Asynchronous reset

  • Synchronous counting and loading

  • Two count enable inputs for n-bit cascading

  • Positive edge-triggered clock

  • Complies with JEDEC standard:

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A (2.3 V to 2.7 V)

    • JESD8-C/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

参数类型

型号 Package name
74LVC161DB SSOP16

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
74LVC161DB 74LVC161DB,118
(935210520118)
Withdrawn / End-of-life LVC161 SOT338-1
SSOP16
(SOT338-1)
SOT338-1 SSOP-TSSOP-VSO-REFLOW
SSOP-TSSOP-VSO-WAVE
暂无信息
74LVC161DB,112
(935210520112)
Obsolete LVC161 暂无信息

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74LVC161DB 74LVC161DB,118 74LVC161DB rohs rhf rhf
74LVC161DB 74LVC161DB,112 74LVC161DB rohs rhf rhf
品质及可靠性免责声明

文档 (10)

文件名称 标题 类型 日期
74LVC161 Presettable synchronous 4-bit binary counter; asynchronous reset Data sheet 2024-02-12
AN11009 Pin FMEA for LVC family Application note 2019-01-09
AN263 Power considerations when using CMOS and BiCMOS logic devices Application note 2023-02-07
lvc161 lvc161 IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SSOP16_SOT338-1_mk plastic, shrink small outline package; 16 leads; 0.65 mm pitch; 6.2 mm x 5.3 mm x 2 mm body Marcom graphics 2017-01-28
SOT338-1 plastic, shrink small outline package; 16 leads; 0.65 mm pitch; 6.2 mm x 5.3 mm x 2 mm body Package information 2022-06-20
SSOP-TSSOP-VSO-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
lvc lvc Spice model SPICE model 2013-05-07
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

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模型

文件名称 标题 类型 日期
lvc161 lvc161 IBIS model IBIS model 2013-04-08
lvc lvc Spice model SPICE model 2013-05-07

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.