双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVT02DB

3.3 V Quad 2-input NOR gate

The 74LVT02 is a quad 2-input NOR gate. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此产品已停产

Alternatives

Features and benefits

  • Wide supply voltage range from 2.7 V to 3.6 V

  • Output capability: +64 mA and -32 mA

  • Direct interface with TTL levels

  • Overvoltage tolerant inputs to 5.5 V

  • Power-up 3-state

  • No bus current loading when output is tied to 5 V bus

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up performance exceeds 500 mA per JESD 78 Class II Level B

  • Complies with JEDEC standards:

    • JESD8C (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to 85 °C

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74LVT02DB 74LVT02DB,112
(935208960112)		 Obsolete no package information
74LVT02DB,118
(935208960118)		 Obsolete

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74LVT02DB 74LVT02DB,112 74LVT02DB rohs rhf rhf
74LVT02DB 74LVT02DB,118 74LVT02DB rohs rhf rhf
品质及可靠性免责声明

Series

文档 (3)

文件名称 标题 类型 日期
74LVT02 3.3 V Quad 2-input NOR gate Data sheet 2024-04-18
lvt02 lvt02 IBIS model IBIS model 2013-04-09
lvt lvt Spice model SPICE model 2013-05-07

支持

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模型

文件名称 标题 类型 日期
lvt02 lvt02 IBIS model IBIS model 2013-04-09
lvt lvt Spice model SPICE model 2013-05-07

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册