双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NEX90515BPA-Q100

150 mA, 40 V ultra-low Iq (5.3 µA) low-dropout voltage regulator

The NEX90515-Q100 device is a low-dropout (LDO) linear regulator designed for applications with input voltages of up to 40 V. It features a typical quiescent current (IQ) of only 5.3 μA at light load and a typical shutdown current (ISHUT) of 300 nA when disabled. This makes the device ideal for powering always-on components, such as microcontrollers (MCUs) and Controller Area Network (CAN) or Local Interconnect Network (LIN) transceivers in standby or CAN-wake systems.

In battery-powered automotive applications, low IQ and ISHUT are critical for saving energy and extending battery life. Always-on systems require ultra-low IQ across an extended temperature range to ensure sustained operation when the vehicle ignition is off. In CAN-wake systems or certain sleep modes, maintaining an ultralow ISHUT is essential to minimize battery consumption even when the system is in sleep or disabled mode.

The device features integrated protections for shortcircuit, over-current, and thermal shutdown. It operates within an ambient temperature range of -40 °C to 125 °C and a junction temperature range of -40 °C to 150 °C. Additionally, this device is available in an enhanced thermal package, HTSSOP8.

Table 1. Device information
Part number Package Body size (nom)

NEX90515-Q100

HTSSOP8

3.0 mm x 3.0 mm

Features and benefits

  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1 (Tamb): -40 °C to 125 °C
    • Junction temperature (TJ): -40 °C to 150 °C
  • Input voltage range: 3 V to 40 V (45 V transient)
  • Output voltage range: 3.3 V and 5 V (fixed)
  • Output voltage accuracy: ±2% (max)
  • Maximum output current: 150 mA
  • Low dropout voltage:
    • 230 mV typical at 150 mA (VOUT = 5 V)
  • Low quiescent current (IQ):
    • 5.3 µA typical at light loads
    • 300 nA typical shutdown current
  • Stable with a wide range of ceramic output-stability cap:
    • ESR from 0.001 Ω to 2 Ω; output cap of 1 µF to 220 µF
  • Integrated various fault protections:
    • Thermal shutdown
    • Short-circuit and over-current protection
  • Enhanced thermal package available:
    • HTSSOP8, RθJA= 62.3 °C/W

Applications

  • Body control modules (BCM)

  • Automotive lighting

  • Automotive head units & cluster

  • Telematics control units

  • EV/HEV power train

Figure 1. Typical application

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
NEX90515BPA-Q100 NEX90515BPA-Q100F
(935692224135)
Active N150P SOT8062-1
HTSSOP
(SOT8062-1)
SOT8062-1 暂无信息

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NEX90515BPA-Q100 NEX90515BPA-Q100F NEX90515BPA-Q100 rohs rhf rhf
品质及可靠性免责声明

文档 (2)

文件名称 标题 类型 日期
NEX90515_Q100 150 mA, 40 V ultra-low Iq (5.3 µA) low-dropout voltage regulator Data sheet 2024-11-12
SOT8062-1 Plastic, thermal enhanced thin shrink small outline package; 8 leads,0.65 mm pitch, 3 mm × 3 mm × 1.1 mm body Package information 2024-11-07

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模型

No documents available

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
NEX90515BPA-Q100 NEX90515BPA-Q100F 935692224135 Active 暂无信息 4,000 订单产品

样品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
NEX90515BPA-Q100 NEX90515BPA-Q100F 935692224135 SOT8062-1 订单产品