双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

CBTD3384DK

10-bit level shifting bus switch with 5-bit output enables

The CBTD3384 is a dual 5-pole, single-throw bus switch. The device features two output enable inputs (nOE) that each control five switch channels. The switches are disabled when the associated nOE input is HIGH. CBTD3384 is specifically designed for 5 V to 3.3 V level shifting applications. This device is fully specified for partial power down applications using IOFF.

此产品已停产

Features and benefits

  • Designed to be used in 5 V to 3.3 V level shifting applications with internal diode

  • 5 Ω switch connection between two ports

  • Direct interface with TTL levels

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up protection exceeds 100 mA per JESD78

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C

参数类型

型号 Package name
CBTD3384DK SSOP24

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
CBTD3384DK CBTD3384DK,118
(935270732118)		 Obsolete CBTD3384DK Standard Procedure Standard Procedure no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
CBTD3384DK CBTD3384DK,118 CBTD3384DK rohs rhf rhf
品质及可靠性免责声明

Series

文档 (3)

文件名称 标题 类型 日期
CBTD3384 10-bit level shifting bus switch with 5-bit output enables Data sheet 2024-06-04
AN90010 Pin FMEA for CBT(D) family Application note 2019-10-28
cbtd3384 cbtd3384 IBIS model IBIS model 2013-04-08

支持

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模型

文件名称 标题 类型 日期
cbtd3384 cbtd3384 IBIS model IBIS model 2013-04-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册