双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

CBTD3861PW

10-bit level shifting bus switch with output enable

The CBTD3861 provides ten bits of high-speed TTL-compatible bus switching. The low ON resistance of the switch allows connections to be made with minimal propagation delay.

The CBTD3861 device is organized as one 10-bit bus switches with one output enable (OE) input. When OE is LOW, the switch is on and port A is connected to the B port. When OE is HIGH, each switch is disabled.

The CBTD3861 is characterized for operation from -40 ℃ to +85 ℃.

此产品已停产

Features and benefits

  • Designed to be used in 5 V to 3.3 V level shifting applications with internal diode

  • 5 Ω switch connection between two ports

  • TTL-compatible control input levels

  • Latch-up protection exceeds 100 mA per JESD78

  • ESD protection:

    • HBM JESD22-A114F exceeds 2000 V

    • CDM JESD22-C101C exceeds 1000 V

Applications

参数类型

型号 VCC (V) VPASS (V) Logic switching levels RON (Ω) f(-3dB) (MHz) Nr of bits tpd (ns) Power dissipation considerations Tamb (°C)
CBTD3861PW 4.5 - 5.5 3.3 TTL 7 300 10 0.25 very low -40~85

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
CBTD3861PW CBTD3861PW,118
(935291686118)
Obsolete no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
CBTD3861PW CBTD3861PW,118 CBTD3861PW rohs rhf rhf
品质及可靠性免责声明

Series

文档 (2)

文件名称 标题 类型 日期
CBTD3861 10-bit level shifting bus switch with output enable Data sheet 2019-03-06
AN90010 Pin FMEA for CBT(D) family Application note 2019-10-28

支持

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模型

No documents available

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.