双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVC2G241GF

Dual buffer/line driver; 3-state

The 74LVC2G241 is a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE:

  • A HIGH level at pin 1OE causes output 1Y to assume a high-impedance OFF-state.

  • A LOW level at pin 2OE causes output 2Y to assume a high-impedance OFF-state.

Schmitt trigger action at all inputs makes the circuit highly tolerant of slower input rise and fall times.

Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of the 74LVC2G241 as a translator in a mixed 3.3 V and 5 V environment.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.

此产品已停产

Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • 5 V tolerant input/output for interfacing with 5 V logic

  • High noise immunity

  • ±24 mA output drive (VCC = 3.0 V)

  • CMOS low power consumption

  • Latch-up performance exceeds 250 mA

  • Direct interface with TTL levels

  • Inputs accept voltages up to 5 V

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8-B/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
74LVC2G241GF 74LVC2G241GF,115
(935291506115)
Obsolete no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74LVC2G241GF 74LVC2G241GF,115 74LVC2G241GF rohs rhf rhf
品质及可靠性免责声明

文档 (3)

文件名称 标题 类型 日期
74LVC2G241 Dual buffer/line driver; 3-state Data sheet 2024-04-30
AN11009 Pin FMEA for LVC family Application note 2019-01-09
lvc2g241 74LVC2G241 IBIS model IBIS model 2014-10-20

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模型

文件名称 标题 类型 日期
lvc2g241 74LVC2G241 IBIS model IBIS model 2014-10-20

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.