双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AHC3GU04GD

Triple unbuffered inverter

The 74AHC3GU04 is a triple unbuffered inverter. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments.

此产品已停产

Alternatives

Features and benefits

  • Symmetrical output impedance

  • Balanced propagation delays

  • Wide supply voltage range from 2.0 to 5.5 V

  • Overvoltage tolerant inputs to 5.5 V

  • CMOS input level

  • High noise immunity

  • CMOS low power dissipation

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level A

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

参数类型

型号 Package name
74AHC3GU04GD XSON8

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74AHC3GU04GD 74AHC3GU04GD,125
(935288572125)		 Obsolete AU4 Standard Procedure Standard Procedure SOT996-2
XSON8
(SOT996-2) 		SOT996-2 SOT996-2_125

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74AHC3GU04GD 74AHC3GU04GD,125 74AHC3GU04GD rohs rhf rhf
品质及可靠性免责声明

Series

文档 (5)

文件名称 标题 类型 日期
74AHC3GU04 Triple unbuffered inverter Data sheet 2023-09-06
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11106 Pin FMEA for AHC/AHCT family Application note 2019-01-09
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

支持

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册