双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVTN16245BBX

3.3 V 16-bit transceiver; 3-state

The 74LVTN16245B is a high-performance BiCMOS product designed for VCC operation at 3.3 V.

This device is a 16-bit transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive directions. The control function implementation minimizes external timing requirements. The device features an output enable input (nOE) for easy cascading and a direction input (nDIR) for direction control.

此产品已停产

Features and benefits

  • 16-bit bus interface

  • 3-state buffers

  • Output capability: +64 mA and -32 mA

  • TTL input and output switching levels

  • Input and output interface capability to systems at 5 V supply

  • Power-up 3-state

  • Live insertion and extraction permitted

  • No bus current loading when output is tied to 5 V bus

  • Latch-up protection

    • JESD78B Class II exceeds 500 mA

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C

参数类型

型号 Package name
74LVTN16245BBX HXQFN60U

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74LVTN16245BBX 74LVTN16245BBX,518
(935295883518)		 Obsolete LVTN16245B Standard Procedure Standard Procedure no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74LVTN16245BBX 74LVTN16245BBX,518 74LVTN16245BBX rohs rhf rhf
品质及可靠性免责声明

Series

文档 (2)

文件名称 标题 类型 日期
74LVTN16245B 3.3 V 16-bit transceiver; 3-state Data sheet 2024-07-08
lvtn16245b lvtn16245b IBIS model IBIS model 2013-04-09

支持

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模型

文件名称 标题 类型 日期
lvtn16245b lvtn16245b IBIS model IBIS model 2013-04-09

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册