双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

SOT765-1

74AUP2G79-Q100

Low-power dual D-type flip-flop; positive-edge trigger

The 74AUP2G79-Q100 provides the dual positive-edge triggered D-type flip-flop. Information on the data input (nD) is transferred to the nQ output on the LOW-to-HIGH transition of the clock pulse (nCP). The nD input must be stable one set-up time prior to the LOW-to-HIGH clock transition for predictable operation.

Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.

This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

  • Wide supply voltage range from 0.8 V to 3.6 V

  • High noise immunity

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • Low static power consumption; ICC = 0.9 μA (maximum)

  • Latch-up performance exceeds 100 mA per JESD78 Class II

  • Inputs accept voltages up to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

参数类型

型号 VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Power dissipation considerations Tamb (°C) Package name
74AUP2G79DC-Q100 0.8 - 3.6 CMOS ± 1.9 8.5 400 ultra low -40~125 VSSOP8

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
74AUP2G79DC-Q100 74AUP2G79DC-Q100H
(935301664125)
Active p79 SOT765-1
VSSOP8
(SOT765-1)
SOT765-1 SOT765-1_125

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74AUP2G79DC-Q100 74AUP2G79DC-Q100H 74AUP2G79DC-Q100 rohs rhf rhf
品质及可靠性免责声明

文档 (11)

文件名称 标题 类型 日期
74AUP2G79_Q100 Low-power dual D-type flip-flop; positive-edge trigger Data sheet 2023-07-18
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11052 Pin FMEA for AUP family Application note 2019-01-09
Nexperia_document_guide_MiniLogic_PicoGate_201901 PicoGate leaded logic portfolio guide Brochure 2019-01-07
SOT765-1 3D model for products with SOT765-1 package Design support 2020-01-22
aup2g79 aup2g79 IBIS model IBIS model 2013-04-07
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
VSSOP8_SOT765-1_mk plastic, very thin shrink small outline package; 8 leads; 0.5 mm pitch; 2 mm x 2.3 mm x 1 mm body Marcom graphics 2017-01-28
SOT765-1 plastic, very thin shrink small outline package; 8 leads; 0.5 mm pitch; 2 mm x 2.3 mm x 1 mm body Package information 2022-06-03
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
SOT765-1 3D model for products with SOT765-1 package Design support 2020-01-22
aup2g79 aup2g79 IBIS model IBIS model 2013-04-07

Ordering, pricing & availability

样品

作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表