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Click here for more information74LV165DB
8-bit parallel-in/serial-out shift register
The 74LV165 is an 8-bit serial or parallel-in/serial-out shift register. The device features a serial data input (DS), eight parallel data inputs (D0 to D7) and two complementary serial outputs (Q7 and Q7). When the parallel load input (PL) is LOW the data from D0 to D7 is loaded into the shift register asynchronously. When PL is HIGH data enters the register serially at DS. When the clock enable input (CE) is LOW data is shifted on the LOW-to-HIGH transitions of the CP input. A HIGH on CE will disable the CP input. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess VCC.
Alternatives
Features and benefits
Wide supply voltage range from 1.0 V to 5.5 V
CMOS low power dissipation
Direct interface with TTL levels (2.7 V to 3.6 V)
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Optimized for low voltage applications: 1.0 V to 3.6 V
Synchronous parallel-to-serial applications
Synchronous serial input for easy expansion
Complies with JEDEC standards:
- JESD8-7 (1.65 V to 1.95 V)
- JESD8-5 (2.3 V to 2.7 V)
- JESD8C (2.7 V to 3.6 V)
- JESD36 (4.5 V to 5.5 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
PCB Symbol, Footprint and 3D Model
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封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
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74LV165DB | 74LV165DB,112 (935166030112) |
Obsolete | no package information | ||||
74LV165DB,118 (935166030118) |
Obsolete |
Series
文档 (1)
文件名称 | 标题 | 类型 | 日期 |
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74LV165 | 8-bit parallel-in/serial-out shift register | Data sheet | 2024-01-31 |
支持
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模型
No documents available
PCB Symbol, Footprint and 3D Model
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.