双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LV08DB

Quad 2-input AND gate

The 74LV08 is a quad 2-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess VCC.

此产品已停产

Alternatives

Features and benefits

  • Wide supply voltage range from 1.0 V to 5.5 V

  • CMOS low power dissipation

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Optimized for low voltage applications: 1.0 V to 3.6 V

  • Accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V

  • Typical output ground bounce < 0.8 V at VCC = 3.3 V and Tamb = 25 °C

  • Typical HIGH-level output voltage (VOH) undershoot: > 2 V at VCC = 3.3 V and Tamb = 25 °C

  • Complies with JEDEC standards:

    • JESD8-7 (1.65 V to 1.95 V)
    • JESD8-5 (2.3 V to 2.7 V)
    • JESD8C (2.7 V to 3.6 V)
    • JESD36 (4.5 V to 5.5 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74LV08DB 74LV08DB,112
(935169270112)		 Obsolete no package information
74LV08DB,118
(935169270118)		 Obsolete

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74LV08DB 74LV08DB,112 74LV08DB rohs rhf rhf
74LV08DB 74LV08DB,118 74LV08DB rohs rhf rhf
品质及可靠性免责声明

Series

文档 (2)

文件名称 标题 类型 日期
74LV08 Quad 2-input AND gate Data sheet 2024-01-30
74lv08 74lv08 IBIS model IBIS model 2016-05-25

支持

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模型

文件名称 标题 类型 日期
74lv08 74lv08 IBIS model IBIS model 2016-05-25

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册