双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

SOT363-2

74AUP1T98-Q100

Low-power configurable gate with voltage-level translator

The 74AUP1T98-Q100 is a configurable multiple function gate with level translating, Schmitt-trigger inputs. The device can be configured as any of the following logic functions MUX, AND, OR, NAND, NOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCC or GND. Low threshold Schmitt trigger inputs allow these devices to be driven by 1.8 V logic levels in 3.3 V applications.

This device ensures very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

  • Wide supply voltage range from 2.3 V to 3.6 V

  • CMOS low power dissipation

  • High noise immunity

  • Complies with JEDEC standards
    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

  • Low static power consumption; ICC = 1.5 μA (maximum)

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Overvoltage tolerant inputs to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

参数类型

型号 VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Package name
74AUP1T98GW-Q100 2.3 - 3.6 CMOS ± 1.9 3.9 70 1 ultra low -40~125 TSSOP6

封装

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
74AUP1T98GW-Q100 74AUP1T98GW-Q100H
(935303992125)
Active aR SOT363-2
TSSOP6
(SOT363-2)
SOT363-2 SOT363-2_125

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74AUP1T98GW-Q100 74AUP1T98GW-Q100H 74AUP1T98GW-Q100 rohs rhf rhf
品质及可靠性免责声明

文档 (7)

文件名称 标题 类型 日期
74AUP1T98_Q100 Low-power configurable gate with voltage-level translator Data sheet 2023-07-17
AN10161 PicoGate Logic footprints Application note 2002-10-29
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02
aup1t98 aup1t98 IBIS model IBIS model 2014-12-21
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12
SOT363-2 plastic thin shrink small outline package; 6 leads; body width 1.25 mm Package information 2022-11-21
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10

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模型

文件名称 标题 类型 日期
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02
aup1t98 aup1t98 IBIS model IBIS model 2014-12-21

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