双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PDTD123YK

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm

500 mA NPN Resistor-Equipped Transistors (RET) family.

此产品已停产

Features and benefits

  • Built-in bias resistors
  • Simplifies circuit design
  • 500 mA output current capability
  • Reduces component count
  • Reduces pick and place costs
  • ±10 % resistor ratio tolerance
  • AEC-Q101 qualified

Applications

  • Digital application in automotive and industrial segment
  • Controlling IC inputs
  • Cost saving alternative for BC817 series in digital applications
  • Switching loads

参数类型

型号 Package version Package name Size (mm)
PDTD123YK SOT346 SMT3; MPAK 2.9 x 1.5 x 1.15

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PDTD123YK PDTD123YK,115
(934058972115)		 Obsolete no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PDTD123YK PDTD123YK,115 PDTD123YK rohs rhf rhf
品质及可靠性免责声明

文档 (3)

文件名称 标题 类型 日期
PDTD123Y_SER NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm Data sheet 2009-11-26
LSYMTRA Letter Symbols - Transistors; General Other type 1999-05-06
PDTD123YK PDTD123YK SPICE model SPICE model 2024-08-27

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PDTD123YK PDTD123YK SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册