双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NPIC6C595PW-Q100

Power logic 8-bit shift register; open-drain outputs

The NPIC6C595-Q100 is an 8-bit serial-in/serial or parallel-out shift register with a storage register and open-drain outputs. Both the shift and storage register have separate clocks. The device features a serial input (DS) and a serial output (Q7S) to enable cascading and an asynchronous reset input (MR). A LOW on MR resets both the shift register and storage register. Data is shifted on the LOW-to-HIGH transitions of the SHCP input. The data in the shift register is transferred to the storage register on a LOW-to-HIGH transition of the STCP input and to the Q7S output on a LOW-to-HIGH transition of the SHCP input. If both clocks are connected together, the shift register is always one clock pulse ahead of the storage register. Data in the storage register drives the gate of the output extended-drain NMOS transistor whenever the output enable input (OE) is LOW. A HIGH on OE causes the outputs to assume a high-impedance OFF-state. Operation of the OE input does not affect the state of the registers. The open-drain outputs are 33 V/100 mA continuous current extended-drain NMOS transistors designed for use in systems that require moderate load power such as LEDs.

Integrated voltage clamps in the outputs provide protection against inductive transients making the device suitable for power driver applications such as relay, solenoids and other low-current or medium-voltage loads.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

此产品已停产

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +125 °C

  • Low RDSon

  • Eight Power EDNMOS transistor outputs of 100 mA continuous current

  • 250 mA current limit capability

  • Output clamping voltage 33 V

  • 30 mJ avalanche energy capability

  • All registers cleared with single input

  • Low power consumption

  • ESD protection:

    • HBM AEC-Q100-002 revision D exceeds 2500 V

    • CDM AEC-Q100-011 revision B exceeds 1000 V

  • DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints

Applications

  • LED sign

  • Graphic status panel

  • Fault status indicator

参数类型

型号 Package name
NPIC6C595PW-Q100 TSSOP16

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
NPIC6C595PW-Q100 NPIC6C595PW-Q100,1
(935298534118)
Withdrawn / End-of-life IC6C595 SOT403-1
TSSOP16
(SOT403-1)
SOT403-1 SSOP-TSSOP-VSO-WAVE
SOT403-1_118

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
NPIC6C595PW-Q100 NPIC6C595PW-Q100,1 NPIC6C595PW-Q100 rohs rhf rhf
品质及可靠性免责声明

文档 (10)

文件名称 标题 类型 日期
NPIC6C595_Q100 Power logic 8-bit shift register; open-drain outputs Data sheet 2020-06-10
AN11537 Pin FMEA for NPIC Family Application note 2019-10-07
SOT403-1 3D model for products with SOT403-1 package Design support 2020-01-22
npic6c595 NPIC6C595 IBIS model IBIS model 2016-05-30
Nexperia_document_leaflet_Logic_NPIC_ShiftRegisters_201906 NPIC Logic Shift Registers Leaflet 2019-07-12
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
TSSOP16_SOT403-1_mk plastic, thin shrink small outline package; 16 leads; 0.65 mm pitch; 5 mm x 4.4 mm x 1.1 mm body Marcom graphics 2017-01-28
SOT403-1 plastic, thin shrink small outline package; 16 leads; 5 mm x 4.4 mm x 1.2 mm body Package information 2023-11-08
NPIC6C595PW-Q100_Nexperia_Product_Reliability NPIC6C595PW-Q100 Nexperia Product Reliability Quality document 2024-06-16
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

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模型

文件名称 标题 类型 日期
npic6c595 NPIC6C595 IBIS model IBIS model 2016-05-30
SOT403-1 3D model for products with SOT403-1 package Design support 2020-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.