双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVC1G10GW-Q100

Single 3-input NAND gate

The 74LVC1G10-Q100 provides a low-power, low-voltage single 3-input NAND gate.

The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment.

Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall time.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

  • Wide supply voltage range from 1.65 V to 5.5 V

  • High noise immunity

  • ±24 mA output drive (VCC = 3.0 V)

  • CMOS low power dissipation

  • Latch-up performance exceeds 250 mA

  • Direct interface with TTL levels

  • Inputs accept voltages up to 5 V

  • IOFF circuitry provides partial Power-down mode operation

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

    • JESD36 (4.5 V to 5.5 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

参数类型

型号 VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Package name
74LVC1G10GW-Q100 1.65 - 5.5 CMOS/LVTTL ± 32 2.6 175 1 low -40~125 TSSOP6

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74LVC1G10GW-Q100 74LVC1G10GW-Q100H
(935309202125)		 Active YM SOT363-2
TSSOP6
(SOT363-2) 		SOT363-2 SOT363-2_125

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74LVC1G10GW-Q100 74LVC1G10GW-Q100H 74LVC1G10GW-Q100 rohs rhf rhf
品质及可靠性免责声明

Series

文档 (8)

文件名称 标题 类型 日期
74LVC1G10_Q100 Single 3-input NAND gate Data sheet 2023-08-14
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11009 Pin FMEA for LVC family Application note 2019-01-09
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02
lvc1g10 74LVC1G10 IBIS model IBIS model 2014-10-20
SOT363-2 plastic thin shrink small outline package; 6 leads; body width 1.25 mm Package information 2022-11-21
SOT363-2_125 TSSOP6 ; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2022-11-04
74LVC1G10GW-Q100_Nexperia_Product_Reliability 74LVC1G10GW-Q100 Nexperia Product Reliability Quality document 2024-06-16

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
lvc1g10 74LVC1G10 IBIS model IBIS model 2014-10-20
SOT363-2 3D model for products with SOT363-2 package Design support 2023-02-02

PCB Symbol, Footprint and 3D Model

Model Name 描述

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
74LVC1G10GW-Q100 74LVC1G10GW-Q100H 935309202125 Active SOT363-2_125 3,000 订单产品

样品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
74LVC1G10GW-Q100 74LVC1G10GW-Q100H 935309202125 SOT363-2 订单产品