可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
74CBTLV3126PW-Q100 | 74CBTLV3126PW-Q10J | 935300956118 | SOT402-1 | 订单产品 |
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Click here for more information4-bit bus switch
The 74CBTLV3126-Q100 provides a 4-bit high-speed bus switch with separate output enable inputs (1OE to 4OE). The low on-state resistance of the switch allows connections to be made with minimal propagation delay. The switch is disabled (high-impedance OFF-state) when the output enable (nOE) input is LOW.
To ensure the high-impedance OFF-state during power-up or power-down, nOE should be tied to the GND through a pull-down resistor. The current-sinking capability of the driver determines the minimum value of the resistor.
Schmitt trigger action at control input makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 2.3 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Supply voltage range from 2.3 V to 3.6 V
Standard ’126’-type pinout
High noise immunity
Complies with JEDEC standard:
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V)
5 Ω switch connection between two ports
Rail to rail switching on data I/O ports
CMOS low power consumption
Latch-up performance exceeds 250 mA per JESD78B Class I level A
IOFF circuitry provides partial Power-down mode operation
DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
型号 | VCC (V) | RON (Ω) | Logic switching levels | tpd (ns) | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
---|---|---|---|---|---|---|---|---|---|---|
74CBTLV3126PW-Q100 | 2.3 - 3.6 | 7 | CMOS/LVTTL | 0.2 | very low | -40~125 | 141 | 8 | 68 | TSSOP14 |
Model Name | 描述 |
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型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
74CBTLV3126PW-Q100 | 74CBTLV3126PW-Q10J (935300956118) |
Active | TLV3126 |
TSSOP14 (SOT402-1) |
SOT402-1 |
SSOP-TSSOP-VSO-WAVE
|
SOT402-1_118 |
型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
---|---|---|---|---|
74CBTLV3126PW-Q100 | 74CBTLV3126PW-Q10J | 74CBTLV3126PW-Q100 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74CBTLV3126_Q100 | 4-bit bus switch | Data sheet | 2024-04-11 |
SOT402-1 | 3D model for products with SOT402-1 package | Design support | 2023-02-02 |
cbtlv3126 | 74CBTLV3126 IBIS model | IBIS model | 2015-02-23 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
TSSOP14_SOT402-1_mk | plastic, thin shrink small outline package; 14 leads; 0.65 mm pitch; 5 mm x 4.4 mm x 1.1 mm body | Marcom graphics | 2017-01-28 |
SOT402-1 | plastic, thin shrink small outline package; 14 leads; 0.65 mm pitch; 5 mm x 4.4 mm x 1.2 mm body | Package information | 2023-11-07 |
SOT402-1_118 | TSSOP14; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2020-04-21 |
74CBTLV3126PW-Q100_Nexperia_Product_Reliability | 74CBTLV3126PW-Q100 Nexperia Product Reliability | Quality document | 2024-06-16 |
SSOP-TSSOP-VSO-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
74CBTLV3126PW-Q100 | 74CBTLV3126PW-Q10J | 935300956118 | Active | SOT402-1_118 | 2,500 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.