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Click here for more informationBUK962R8-60E
N-channel TrenchMOS logic level FET
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
Features and benefits
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C
Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BUK962R8-60E | SOT404 | D2PAK | End of life | N | 1 | 60 | 2.5 | 2.8 | 175 | 120 | 28.6 | 324 | 74 | 1.7 | Y | 11701 | 925 | 2012-06-27 |
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
BUK962R8-60E | BUK962R8-60E,118 (934066663118) |
Withdrawn / End-of-life | BUK962R8 60E |
D2PAK (SOT404) |
SOT404 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT404_118 |
Series
文档 (21)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
BUK962R8-60E | N-channel TrenchMOS logic level FET | Data sheet | 2017-03-20 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT404 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
D2PAK_SOT404_mk | plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body | Marcom graphics | 2017-01-28 |
SOT404 | plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body | Package information | 2022-05-27 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
BUK962R8-60E | BUK962R8-60E Spice model | SPICE model | 2012-07-17 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
BUK962R8-60E_RC_Thermal_Model | BUK962R8-60E Thermal design model | Thermal design | 2021-01-18 |
BUK962R8-60E | BUK962R8-60E Thermal model | Thermal model | 2012-07-10 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
BUK962R8-60E | BUK962R8-60E Spice model | SPICE model | 2012-07-17 |
BUK962R8-60E_RC_Thermal_Model | BUK962R8-60E Thermal design model | Thermal design | 2021-01-18 |
BUK962R8-60E | BUK962R8-60E Thermal model | Thermal model | 2012-07-10 |
SOT404 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.