双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PBSS4220V

20 V, 2 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.

PNP complement: PBSS5220V.

此产品已停产

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • AEC-Q101 qualified

Applications

  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Low power switches (e.g. motors, fans)
  • Portable applications

参数类型

型号 Package version Package name Size (mm) channel type (e) Ptot (mW) VCEO [max] (V) IC [max] (mA) hFE [min] Automotive qualified
PBSS4220V SOT666 SOT666 1.6 x 1.2 x 0.55 NPN 300.0 20.0 2000.0 220.0 Y

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
PBSS4220V PBSS4220V,115
(934059259115)
Obsolete SOT666
(SOT666)
SOT666 REFLOW_BG-BD-1
SOT666_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PBSS4220V PBSS4220V,115 PBSS4220V rohs rhf rhf
品质及可靠性免责声明

文档 (6)

文件名称 标题 类型 日期
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note 2021-06-23
SOT666 3D model for products with SOT666 package Design support 2019-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT666_mk plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body Marcom graphics 2017-01-28
SOT666 plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body Package information 2022-06-01
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
SOT666 3D model for products with SOT666 package Design support 2019-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.