双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN1R9-40YSD

N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.

Features and benefits

  • 200 A continuous ID(max) rating

  • Avalanche rated, 100% tested at IAS = 180 A

  • Strong SOA (linear-mode) rating

  • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'

  • Low QRR, QG and QGD for high system efficiency and low EMI designs

  • Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage

  • High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C

  • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints

  • Low parasitic inductance and resistance

Applications

  • High-performance synchronous rectification

  • DC-to-DC converters

  • High performance and high efficiency server power supply

  • Brushless DC motor control

  • Battery protection

  • Load-switch and eFuse

  • Inrush management, hotswap

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R9-40YSD SOT669 LFPAK56; Power-SO8 Production N 1 40 1.9 175 200 8.2 57 194 27 3 N 4427 1115 2018-07-18

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PSMN1R9-40YSD PSMN1R9-40YSDX
(934660733115)		 Active 1D9S40Y SOT669
LFPAK56; Power-SO8
(SOT669) 		SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PSMN1R9-40YSD PSMN1R9-40YSDX PSMN1R9-40YSD rohs rhf
品质及可靠性免责声明

Series

文档 (19)

文件名称 标题 类型 日期
PSMN1R9-40YSD N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Data sheet 2019-09-06
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
PSMN1R9-40YSD_LTspice_V1 PSMN1R9-40YSD Precision ElectroThermal (PET) LTspice model PET SPICE model 2024-08-07
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2022-05-30
SOT669_115 LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation Packing information 2022-05-10
Reliability_information_t9_sot669 Reliability information t9_sot669 Quality document 2022-10-18
T9_SOT669_PSMN1R9-40YSD_Nexperia_Quality_document Quality document of T9_SOT669_PSMN1R9-40YSD Quality document 2022-10-18
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN1R9-40YSD PSMN1R9-40YSD SPICE model SPICE model 2019-09-18
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
CauerModel_PSMN1R9-40YSD PSMN1R9-40YSD Cauer model Thermal model 2019-11-08
FosterModel_PSMN1R9-40YSD PSMN1R9-40YSD Foster model Thermal model 2019-11-08
PSMN1R9-40YSD PSMN1R9-40YSD RC thermal model Thermal model 2024-07-03
PSMN1R9-40YSD PSMN1R9-40YSD FloTherm model Thermal model 2019-11-06
PSMN1R9-40YSD_Cauer PSMN1R9-40YSD Cauer model Thermal model 2019-11-08
PSMN1R9-40YSD_Foster PSMN1R9-40YSD Foster model Thermal model 2019-11-08
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PSMN1R9-40YSD_LTspice_V1 PSMN1R9-40YSD Precision ElectroThermal (PET) LTspice model PET SPICE model 2024-08-07
PSMN1R9-40YSD PSMN1R9-40YSD SPICE model SPICE model 2019-09-18
CauerModel_PSMN1R9-40YSD PSMN1R9-40YSD Cauer model Thermal model 2019-11-08
FosterModel_PSMN1R9-40YSD PSMN1R9-40YSD Foster model Thermal model 2019-11-08
PSMN1R9-40YSD PSMN1R9-40YSD RC thermal model Thermal model 2024-07-03
PSMN1R9-40YSD PSMN1R9-40YSD FloTherm model Thermal model 2019-11-06
PSMN1R9-40YSD_Cauer PSMN1R9-40YSD Cauer model Thermal model 2019-11-08
PSMN1R9-40YSD_Foster PSMN1R9-40YSD Foster model Thermal model 2019-11-08
SOT669 3D model for products with SOT669 package Design support 2017-06-30

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
PSMN1R9-40YSD PSMN1R9-40YSDX 934660733115 Active SOT669_115 1,500 订单产品

样品

作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PSMN1R9-40YSD PSMN1R9-40YSDX 934660733115 SOT669 订单产品