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Click here for more informationPSMN8R5-100PSF
NextPower 100 V, 8.7 mΩ N-channel MOSFET in TO220 package
NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications.
Features and benefits
- Optimised for fast switching, low spiking, high efficiency
- Low QG x RDSon FOM for high efficiency switching applications
- Low body diode losses (Qrr) and fast recovery (trr)
- Strong avalanche energy rating (EAS)
- Avalanche rated & 100% tested
- Ha-free & RoHS compliant TO220 package
Applications
- Synchronous rectification in AC-to-DC and DC-to-DC applications
- Brushed & BLDC motor control
- UPS & solar inverter
- LED lighting
- Battery protection
- Full-bridge & half-bridge applications
- Flyback & resonant topologies
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMN8R5-100PSF | SOT78 | TO-220AB | End of life | N | 1 | 100 | 8.7 | 175 | 98 | 8.7 | 44.5 | 183 | 70 | 3.1 | N | 3181 | 551 | 2017-03-23 |
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PSMN8R5-100PSF | PSMN8R5-100PSFQ (934070402127) |
Obsolete |
TO-220AB (SOT78) |
SOT78 | SOT78_127 |
文档 (17)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PSMN8R5-100PSF | NextPower 100 V, 8.7 mΩ N-channel MOSFET in TO220 package | Data sheet | 2018-03-30 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
AN11172 | Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) | Application note | 2021-05-21 |
SOT78 | 3D model for products with SOT78 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT78 | plastic, single-ended package (heatsink mounted, 1 mounting hole); 3 leads; 2.54 mm pitch; 15.6 mm x 10 mm x 4.4 mm body | Package information | 2020-04-21 |
PSMN8R5-100PSF | SPICE mode PSMN8R5-100PSF | SPICE model | 2017-05-15 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
PSMN8R5-100PSF_RCthermal | PSMN8R5-100PSF thermal design | Thermal design | 2017-05-15 |
PSMN8R5-100PSF | Flow thermal model PSMN8R5-100PSF | Thermal model | 2017-05-15 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PSMN8R5-100PSF | SPICE mode PSMN8R5-100PSF | SPICE model | 2017-05-15 |
PSMN8R5-100PSF_RCthermal | PSMN8R5-100PSF thermal design | Thermal design | 2017-05-15 |
PSMN8R5-100PSF | Flow thermal model PSMN8R5-100PSF | Thermal model | 2017-05-15 |
SOT78 | 3D model for products with SOT78 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.