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N-channel DFN3333-8 30 V 9 mΩ logic level MOSFET
Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.
Features and benefits
- High efficiency due to low switching and conduction losses
- Small footprint for compact designs
- Suitable for logic level gate drive sources
Applications
- Battery protection
- DC-to-DC converters
- Load switching
- Power ORing
参数类型
| 型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN9R0-30LL | SOT873-1 | DFN3333-8 | End of life | N | 1 | 30 | 9 | 13 | 150 | 21 | 2.9 | 10 | 20.6 | 50 | 22 | 1.7 | N | 1193 | 223 | 2010-10-13 |
封装
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| PSMN9R0-30LL | PSMN9R0-30LL,115 (934064641115) |
Obsolete | 9R030 Standard Procedure *YWW | no package information | |||
环境信息
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSMN9R0-30LL | PSMN9R0-30LL,115 | PSMN9R0-30LL |
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文档 (14)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PSMN9R0-30LL | N-channel DFN3333-8 30 V 9 mΩ logic level MOSFET | Data sheet | 2011-12-13 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| PSMN9R0-30LL | PSMN9R0-30LL SPICE model | SPICE model | 2010-08-02 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| PSMN9R0-30LL | PSMN9R0-30LL Thermal model | Thermal model | 2010-05-14 |
支持
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模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PSMN9R0-30LL | PSMN9R0-30LL SPICE model | SPICE model | 2010-08-02 |
| PSMN9R0-30LL | PSMN9R0-30LL Thermal model | Thermal model | 2010-05-14 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.