双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PXP9R1-30QL

30 V, P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic level compatible

  • Trench MOSFET technology

  • MLPAK33 package (3.3 x 3.3 mm footprint)

Applications

  • High-side load switch

  • Battery management

  • DC-to-DC conversion

  • Switching circuits

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PXP9R1-30QL SOT8002-1 MLPAK33 Production P 1 -30 9.1 12.8 150 -57.2 11.1 29 57 4.8 9 -1.4 N 2860 320 2021-01-04

Series

文档 (6)

文件名称 标题 类型 日期
AN11119 Medium power small-signal MOSFETs in DC-to-DC conversion Application note 2013-05-07
AN11304 MOSFET load switch PCB with thermal measurement Application note 2013-01-28
AN90017 Load switches for mobile and computing applications Application note 2020-09-02
SOT8002_1 3D model for products with SOT8002-1 package Design support 2021-04-30
SOT8002-1 3D model for products with SOT8002-1 package Design support 2021-01-28
SOT8002-1 plastic thermal enhanced surface mounted package; mini leads; 8 terminals;pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body Package information 2023-05-22

支持

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模型

文件名称 标题 类型 日期
SOT8002_1 3D model for products with SOT8002-1 package Design support 2021-04-30
SOT8002-1 3D model for products with SOT8002-1 package Design support 2021-01-28

订购、定价与供货

样品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册