双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BSN254

N-channel vertical D-MOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

此产品已停产

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for use with all 5 V logic families

Applications

  • Line current interruptors in telephone sets
  • Relay, high-speed and line transformer drivers

参数类型

型号 Package version Package name Product status Release date
BSN254 SOT54 TO-92 End of life 2010-08-03

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
BSN254 BSN254,126
(934004930126)
Obsolete no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
BSN254 BSN254,126 BSN254 rohs rhf rhf
品质及可靠性免责声明

文档 (7)

文件名称 标题 类型 日期
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
BSN254 BSN254 SPICE model SPICE model 2012-06-08
BSN254A BSN254A SPICE model SPICE model 2012-06-08
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
BSN254 BSN254 SPICE model SPICE model 2012-06-08
BSN254A BSN254A SPICE model SPICE model 2012-06-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.