双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BSN254A

N-channel vertical D-MOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

此产品已停产

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for use with all 5 V logic families

Applications

  • Line current interruptors in telephone sets
  • Relay, high-speed and line transformer drivers

参数类型

型号 Package version Package name Product status Channel type Nr of transistors Release date
BSN254A SOT54 TO-92 End of life N 1 2010-08-03

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
BSN254A BSN254A,112
(934003960112)
Obsolete no package information
BSN254A,126
(934003960126)
Obsolete

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
BSN254A BSN254A,112 BSN254A    
BSN254A BSN254A,126 BSN254A rohs rhf rhf
品质及可靠性免责声明

文档 (5)

文件名称 标题 类型 日期
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.