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Click here for more informationBSN254A
N-channel vertical D-MOS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
- Low conduction losses due to low on-state resistance
- Suitable for high frequency applications due to fast switching characteristics
- Suitable for use with all 5 V logic families
Applications
- Line current interruptors in telephone sets
- Relay, high-speed and line transformer drivers
参数类型
| 型号 | Package version | Package name | Product status | Channel type | Nr of transistors | Release date |
|---|---|---|---|---|---|---|
| BSN254A | SOT54 | TO-92 | End of life | N | 1 | 2010-08-03 |
封装
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| BSN254A | BSN254A,112 (934003960112) |
Obsolete | no package information | ||||
| BSN254A,126 (934003960126) |
Obsolete | ||||||
环境信息
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BSN254A | BSN254A,112 | BSN254A | ||
| BSN254A | BSN254A,126 | BSN254A |
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文档 (5)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.