双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PMCM650VNE

12 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

此产品已停产

Features and benefits

  • Low threshold voltage
  • Ultra small package: 0.98 × 1.48 × 0.35 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • Low-side loadswitch
  • Switching circuits

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMCM650VNE OL-PMCM650VNE WLCSP6 End of life N 1 12 8 25 32 150 8.4 3.6 15.4 0.556 0.6 N 1060 330 2015-04-07

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PMCM650VNE PMCM650VNEZ
(934068627023)		 Obsolete no package information
PMCM650VNEF
(934068627135)		 Obsolete

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PMCM650VNE PMCM650VNEZ PMCM650VNE rohs rhf rhf
PMCM650VNE PMCM650VNEF PMCM650VNE rohs rhf rhf
品质及可靠性免责声明

文档 (8)

文件名称 标题 类型 日期
PMCM650VNE 12 V, N-channel Trench MOSFET Data sheet 2017-05-19
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
nexperia_document_leaflet_WLCSP_201803 Small-signal MOSFETs in WLCSP - Smallest size - lowest RDS(on) Leaflet 2018-04-25
nexperia_document_leaflet_WLCSP_201803_CHN WLCSP Chinese Translation Leaflet 2018-04-25
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册