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Click here for more informationPMCM650VNE
12 V, N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
此产品已停产
Features and benefits
- Low threshold voltage
- Ultra small package: 0.98 × 1.48 × 0.35 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
参数类型
| 型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMCM650VNE | OL-PMCM650VNE | WLCSP6 | End of life | N | 1 | 12 | 8 | 25 | 32 | 150 | 8.4 | 3.6 | 15.4 | 0.556 | 0.6 | N | 1060 | 330 | 2015-04-07 |
封装
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| PMCM650VNE | PMCM650VNEZ (934068627023) |
Obsolete | no package information | ||||
| PMCM650VNEF (934068627135) |
Obsolete | ||||||
环境信息
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMCM650VNE | PMCM650VNEZ | PMCM650VNE |
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| PMCM650VNE | PMCM650VNEF | PMCM650VNE |
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文档 (8)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PMCM650VNE | 12 V, N-channel Trench MOSFET | Data sheet | 2017-05-19 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| nexperia_document_leaflet_WLCSP_201803 | Small-signal MOSFETs in WLCSP - Smallest size - lowest RDS(on) | Leaflet | 2018-04-25 |
| nexperia_document_leaflet_WLCSP_201803_CHN | WLCSP Chinese Translation | Leaflet | 2018-04-25 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.