双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PMFPB6545UP

20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination

Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package.

此产品已停产

Features and benefits

  • Trench MOSFET technology
  • Integrated ultra low VF MEGA Schottky diode
  • 1 kV ElectroStatic Discharge (ESD) protection
  • Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
  • Exposed drain pad for excellent thermal conduction

Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management in battery-driven portables
  • Hard disk and computing power management

参数类型

型号 Package version Package name Product status Release date
PMFPB6545UP SOT1118 DFN2020-6 End of life 2010-05-03

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PMFPB6545UP PMFPB6545UP,115
(934064006115)		 Obsolete SOT1118
DFN2020-6
(SOT1118) 		SOT1118 REFLOW_BG-BD-1
SOT1118_115

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PMFPB6545UP PMFPB6545UP,115 PMFPB6545UP rohs rhf rhf
品质及可靠性免责声明

文档 (17)

文件名称 标题 类型 日期
PMFPB6545UP 20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combination Data sheet 2012-06-13
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Application note 2021-04-12
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT1118 3D model for products with SOT1118 package Design support 2019-10-07
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN2020-6_SOT1118_mk plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28
SOT1118 plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Package information 2022-06-02
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMFPB6545UP_8_20_2010 PMFPB6545UP Spice model SPICE model 2013-12-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PMFPB6545UP_8_20_2010 PMFPB6545UP Spice model SPICE model 2013-12-13
SOT1118 3D model for products with SOT1118 package Design support 2019-10-07

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册