Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationPMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Features and benefits
- 1.8 V RDSon rated for low-voltage gate drive
- Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Integrated ultra low VF MEGA Schottky diode
Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portables
- Hard disk and computing power management
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMFPB8032XP | SOT1118 | DFN2020-6 | End of life | P | 2 | -20 | 12 | 102 | 125 | 150 | -3.7 | 0.96 | 5.7 | 0.485 | -0.6 | N | 550 | 63 | 2012-12-21 |
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PMFPB8032XP | PMFPB8032XP,115 (934066583115) |
Withdrawn / End-of-life | 1X |
DFN2020-6 (SOT1118) |
SOT1118 |
REFLOW_BG-BD-1
|
SOT1118_115 |
文档 (17)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PMFPB8032XP | 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination | Data sheet | 2017-05-04 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11304 | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DFN2020-6_SOT1118_mk | plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
SOT1118 | plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-06-02 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
nexperia_report_aoi_inspection_dfn_201808 | Automatic Optical Inspection of DFN Components | Report | 2018-09-03 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.