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Click here for more informationPMR280UN
N-channel TrenchMOS ultra low level FET
N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
Features and benefits
- Surface mounted package
- Low on-state resistance
- Footprint 63% smaller than SOT23
- Low threshold voltage
Applications
- Driver circuits
- Switching in portable appliances
参数类型
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMR280UN | SOT416 | SC-75 | End of life | N | 1 | 20 | 8 | 340 | 430 | 150 | 0.98 | 0.18 | 0.89 | 0.53 | 0.7 | N | 45 | 11 | 2011-01-24 |
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PMR280UN | PMR280UN,115 (934057958115) |
Obsolete |
![]() SC-75 (SOT416) |
SOT416 | SOT416_115 |
文档 (13)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PMR280UN | N-channel TrenchMOS ultra low level FET | Data sheet | 2012-02-06 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT416 | plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body | Package information | 2020-04-21 |
PMR280UN_9_8_2011 | PMR280UN_9_8_2011 Spice parameter | SPICE model | 2012-04-16 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PMR280UN_9_8_2011 | PMR280UN_9_8_2011 Spice parameter | SPICE model | 2012-04-16 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.