双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

NSF030120L3A0

1200 V, 30 mΩ, N-channel SiC MOSFET

The NSF030120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.

Features and benefits

  • Excellent RDSon temperature stability

  • Very low switching losses

  • Fast reverse recovery

  • Fast switching speed

  • Temperature independent turn-off switching losses

  • Very fast and robust intrinsic body diode

Applications

  • E-vehicle charging infrastructure

  • Photovoltaic inverters

  • Switch mode power supply

  • Uninterruptable power supply

  • Motor drives

文档 (5)

文件名称 标题 类型 日期
NSF030120L3A0 1200 V, 30 mΩ, N-channel SiC MOSFET Data sheet 2024-08-01
SOT429-2_TO-247-TL Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Marcom graphics 2023-11-15
SOT429-2 Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Package information 2022-02-10
NSF030120L3A0_model_LTspice_V1_0 NSF030120L3A0 LTspice model SPICE model 2024-07-02
UM90031 A guide to using Nexperia SiC MOSFET LTspice models User manual 2024-07-02

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
NSF030120L3A0_model_LTspice_V1_0 NSF030120L3A0 LTspice model SPICE model 2024-07-02

订购、定价与供货

样品

作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册