可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
PESD5V0L5UV | PESD5V0L5UV,115 | 934057797115 | SOT666 | 订单产品 |
PESD5V0L5UV | PESD5V0L5UV,125 | 934057797125 | SOT666 | 订单产品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationLow capacitance unidirectional fivefold ESD protection diode arrays
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode array in a very small flat lead SOT666 Surface-Mounted Device (SMD) plastic package, designed to protect up to five unidirectional signal lines from the damage caused by ESD and other transients.
ESD protection of up to five lines
Ultra low leakage current: IRM = 5 nA
Low diode capacitance
ESD protection up to 20 kV
Max. peak pulse power: PPP = 25 W
IEC 61000-4-2; level 4 (ESD)
Low clamping voltage: VCL = 12 V
IEC 61000-4-5 (surge); IPP = 2.5 A
Computers and peripherals
Communication systems
Audio and video equipment
Portable electronics
Cellular handsets and accessories
Subscriber Identity Module (SIM) card protection
型号 | Package name | Nr of lines | Configuration | VRWM (V) (V) | Cd [typ] (pF) | VESD IEC61000-4-2 (kV) |
---|---|---|---|---|---|---|
PESD5V0L5UV | SOT666 | 5 | Unidirectional | 5 | 16 | 15 |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PESD5V0L5UV | PESD5V0L5UV,115 (934057797115) |
Active | E2 |
![]() (SOT666) |
SOT666 |
REFLOW_BG-BD-1
|
SOT666_115 |
PESD5V0L5UV,125 (934057797125) |
Active | E2 | SOT666_125 |
型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
---|---|---|---|---|
PESD5V0L5UV | PESD5V0L5UV,115 | PESD5V0L5UV |
|
![]() |
PESD5V0L5UV | PESD5V0L5UV,125 | PESD5V0L5UV |
|
![]() |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PESDXL5UF_V_Y | Low capacitance unidirectional fivefold ESD protection diode arrays | Data sheet | 2020-05-01 |
SOT666 | 3D model for products with SOT666 package | Design support | 2019-01-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT666_mk | plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Marcom graphics | 2017-01-28 |
SOT666 | plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Package information | 2022-06-01 |
SOT666_115 | Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
SOT666_125 | Tape reel SMD; reversed product orientation 12NC ending 125 | Packing information | 2020-04-27 |
PESD5V0L5UV_Nexperia_Product_Quality | PESD5V0L5UV Nexperia Product Quality | Quality document | 2019-05-20 |
PESD5V0L5UV_Nexperia_Product_Reliability | PESD5V0L5UV Nexperia Product Reliability | Quality document | 2024-04-29 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PESD5V0L5UV | PESD5V0L5UV SPICE model | SPICE model | 2012-07-22 |
PESD5V0L5UV | PESD5V0L5UV SPICE model | SPICE model | 2024-08-12 |
PESD3V3L5UY | Cad-Symbol of PESD3V3L5UY | Software | 2008-11-20 |
PESD5V0L5UY | Cad-Symbol of PESD5V0L5UY | Software | 2008-11-20 |
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PESD5V0L5UV | PESD5V0L5UV SPICE model | SPICE model | 2012-07-22 |
PESD5V0L5UV | PESD5V0L5UV SPICE model | SPICE model | 2024-08-12 |
SOT666 | 3D model for products with SOT666 package | Design support | 2019-01-22 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
PESD5V0L5UV | PESD5V0L5UV,115 | 934057797115 | Active | SOT666_115 | 4,000 | 订单产品 |
PESD5V0L5UV | PESD5V0L5UV,125 | 934057797125 | Active | SOT666_125 | 4,000 | 订单产品 |
作为 Nexperia 的客户,您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户,我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.