双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

缓冲器/驱动器/收发器

Nexperia’s high performance half-bridge gate driver supports high efficiency and high robustness conversion

Half-bridge gate driver is commonly used in DC-to-DC power conversion and motor driver applications, in which engineers normally need to drive high side and low side power devices simultaneously or alternately. To achieve high efficiency and high robustness, high driving capability and fast dynamic behavior of driver is key to system design. Nexperia’s first half-bridge gate drivers start with +4/-5 A source/sink driving capability, integrates bootstrap diode and can be implemented up to 120 V input bus voltage. The excellent dynamic performance such as very low propagation delay and delay matching time supports high efficiency circuit design, and strong capability of negative voltage withstanding on all pins contributes to system robustness significantly.

Key features and benefits

  • TTL and CMOS compatible inputs
  • Wide supply range from 8 V to 17 V
  • Integrated Boot strap diode
  • -5 V to 115 V absolute maximum range for VHS
  • UVLO protection on both HS and LS drivers
  • High driving capability of +4/-5 A at 12 V supply
  • Typical 13 ns propagation delay
  • Typical 1ns delay matching from HS to LS driver

关键应用

  • 噪音消除
  • 显示仪表盘
  • 信息娱乐
  • 视觉控制
  • 电池管理系统

产品

型号 描述 状态 快速访问
NGD4300 ACT
NGD4300D 4 A peak high-performance dual MOSFET gate driver Production
NGD4300DD 4 A peak high-performance dual MOSFET gate driver Production
NGD4300GC 4 A peak high-performance dual MOSFET gate driver Production
NGD4300-Q100 ACT
NGD4300DD-Q100 4 A peak high-performance dual MOSFET gate driver Production
NGD4300D 4 A peak high-performance dual MOSFET gate driver Production
NGD4300DD 4 A peak high-performance dual MOSFET gate driver Production
NGD4300DD-Q100 4 A peak high-performance dual MOSFET gate driver Production
NGD4300GC 4 A peak high-performance dual MOSFET gate driver Production
Visit our documentation center for all documentation

Data sheet (2)

文件名称 标题 类型 日期
NGD4300_Q100.pdf 4 A peak high-performance dual MOSFET gate driver Data sheet 2024-11-11
NGD4300.pdf 4 A peak high-performance dual MOSFET gate driver Data sheet 2024-11-11

Leaflet (1)

文件名称 标题 类型 日期
NGD4300_half_bridge_gate_driver_leaflet.pdf Driving Power with Efficiency: The NGD4300 Half-bridge Gate Driver Leaflet 2024-11-14

User manual (1)

文件名称 标题 类型 日期
UM90032.pdf NGD4300 gate driver evaluation board User manual 2024-09-16

如果您有支持方面的疑问,请告知我们。如需获得设计支持,请告知我们并填写技术支持表格,我们会尽快回复您。

请访问我们的社区论坛联系我们


交叉参考