双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

IP4285CZ9-TBB

ESD protection for high-speed interfaces

The device is designed to protect high-speed interfaces such as High-Definition Multimedia Interface (HDMI), DisplayPort, USB, external Serial Advanced Technology Attachment (eSATA) and Low Voltage Differential Signaling (LVDS) interfaces against ElectroStatic Discharge (ESD).

The device includes high-level ESD protection diodes for high-speed signal lines in an ultra small and leadless plastic package DFN2110-9 (SOT1178-1/XSON9). The extremely small package dimensions (2.1 mm × 1 mm × 0.5 mm) make this product ideally suitable for portable devices. The pinout is designed for convenient flow-through routing of high-speed signal lines.

All signal lines are protected by a special diode configuration offering ultra low line capacitance of 0.85 pF maximum. These diodes provide protection to downstream components from ESD voltages up to ±12 kV contact according to IEC 61000-4-2, level 4.

此产品已停产

Features and benefits

  • System ESD protection for USB 2.0, HDMI 1.3 and HDMI 1.4, DisplayPort, eSATA and LVDS
  • All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of ±12 kV according to IEC 61000-4-2, level 4
  • Matched 0.4 mm pitch trace spacing
  • Line capacitance of 0.85 pF maximum for each channel
  • Design-friendly ’flow-through’ signal routing

Applications

The device is designed for high-speed receiver and transmitter port protection:

  • Portable devices
  • Mobile handsets
  • TVs, monitors
  • DVD recorders and players
  • Notebooks, mother boards, graphic cards and ports
  • Set-top boxes and game consoles

文档

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模型

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册