双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PESD5V0L6UAS

Low capacitance 6-fold ESD protection diode arrays

Low capacitance 6-fold ESD protection diode arrays in small plastic packages designed to protect up to six transmission or data lines from the damage caused by ElectroStatic Discharge (ESD) and other transients.

此产品已停产

Features and benefits

  • ESD protection of up to six lines
  • Ultra low leakage current: IRM = 8 nA
  • Low diode capacitance
  • ESD protection of up to 20 kV
  • Max. peak pulse power: PPP = 35 W
  • IEC 61000-4-2, level 4 (ESD)
  • Low clamping voltage: V(CL)R = 15 V
  • IEC 61000-4-5 (surge); IPP = 2.5 A
  • AEC-Q101 qualified

Applications

  • Computers and peripherals
  • High speed data lines
  • Communication systems
  • Parallel ports
  • Audio and video equipment

文档 (2)

文件名称 标题 类型 日期
PESD5V0L6UAS_US Low capacitance 6-fold ESD protection diode arrays Data sheet 2023-04-13
PESD5V0L6UAS PESD5V0L6UAS SPICE model SPICE model 2024-07-08

支持

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模型

文件名称 标题 类型 日期
PESD5V0L6UAS PESD5V0L6UAS SPICE model SPICE model 2024-07-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册