双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

SOT429-2

SOT429-2

Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L

外形图

封装版本 封装名称 封装说明 参考 发行日期
SOT429-2 TO-247-3L Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L 2022-02-08

相关文档

文件名称 标题 类型 日期
SOT429-2_TO-247-TL Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Marcom graphics 2023-11-15
SOT429-2 Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Package information 2022-02-10
SOT429-2_127 TO-247-3L; Tube pack; Standard product orientation Packing information 2023-04-03

采用此封装的产品

IGBT discretes

型号 描述 快速访问
NGW75T65H3DF 650 V ,75 A high speed trench field-stop IGBT with full rated silicon diode
NGW50T65H3DFP 650 V, 50 A high speed trench field-stop IGBT with full rated silicon diode
NGW40T65M3DFP 650 V, 40 A trench field-stop IGBT with full rated silicon diode

SiC MOSFETs

型号 描述 快速访问
NSF080120L3A0 1200 V, 80 mΩ, N-channel SiC MOSFET
NSF040120L3A0 1200 V, 40 mΩ, N-channel SiC MOSFET